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MDD 220
High Power Diode Modules
IFRMS = 2x450 A IFAVM = 2x270 A VRRM = 800-1800 V
3 1 2 2 1 3
VRSM V 900 1300 1500 1700 1900
VRRM V 800 1200 1400 1600 1800
Type
MDD 220-08N1 MDD 220-12N1 MDD 220-14N1 MDD 220-16N1 MDD 220-18N1
Symbol IFRMS IFAVM IFSM
Conditions TVJ = TVJM TC = 100C; 180 sine TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 450 270 8500 9000 7500 8000 360 000 340 000 280 000 260 000 -40...+150 150 -40...+125 A A A A A A As A2 s A2s A2 s C C C V~ V~
2
Features * Direct copper bonded Al2O3 -ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ * UL registered, E 72873 Applications * Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies Advantages * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits Dimensions in mm (1 mm = 0.0394")
i dt
2
TVJ = 45C VR = 0 TVJ = TVJM VR = 0
TVJ TVJM Tstg VISOL Md Weight Symbol IRRM VF VT0 rT RthJC RthJK QS IRM dS dA a 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s
3000 3600
Mounting torque (M5) Terminal connection torque (M8) Typical including screws Test Conditions TVJ = TVJM; VR = VRRM IF = 600 A; TVJ = 25C For power-loss calculations only TVJ = TVJM per diode; DC current per module per diode; DC current per module other values see Fig. 6/7
2.5-5/22-44 Nm/lb.in. 12-15/106-132 Nm/lb.in. 320 g
Characteristic Values 40 1.4 0.75 0.9 0.129 0.065 0.169 0.0845 760 275 12.7 9.6 50 mA V V m K/W K/W K/W K/W C A mm mm m/s2
TVJ = 125C, IF = 400 A; -di/dt = 50 A/s Creepage distance on surface Strike distance through air Maximum allowable acceleration
20
12
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
Threaded spacer for higher Anode/Cathode 14 construction: Type ZY 250, material brass
419
IXYS reserves the right to change limits, test conditions and dimensions
(c) 2004 IXYS All rights reserved
1-3
MDD 220
Fig. 1 Surge overload current IFSM: Crest value, t: duration
Fig. 2 i2dt versus time (1-10 ms)
Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode)
Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load
IXYS reserves the right to change limits, test conditions and dimensions
2-3
(c) 2004 IXYS All rights reserved
419
MDD 220
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
0.15 K/W 30 DC
Fig. 6 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180 120 60 30 RthJC (K/W) 0.129 0.131 0.132 0.132 0.133
ZthJC
0.10
0.05
Constants for ZthJC calculation: i
0 0.00 10-3
Rthi (K/W) 0.0035 0.0165 0.1091
ti (s) 0.0099 0.168 0.456
10-2
10-1
100
101
s
102
t
1 2 3
0.20 K/W 30 DC 0.15
Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180 120 60 30 RthJK (K/W) 0.169 0.171 0.172 0.172 0.173
ZthJK
0.10
0.05
Constants for ZthJK calculation: i Rthi (K/W) 0.0035 0.0165 0.1091 0.04 ti (s) 0.0099 0.168 0.456 1.36
419
0 0.00 10-3
10-2
10-1
100
101
s
102
t
IXYS reserves the right to change limits, test conditions and dimensions
1 2 3 4
(c) 2004 IXYS All rights reserved
3-3

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